Investigation of the physical and practical limits of dense-only phase shift lithography for circuit feature definition*
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. 2001 International Technology Roadmap for Semiconductors(Semiconductor Industry Assn., San Jose, CA, 2001).
2. Low-k[sub 1] optical lithography for 100 nm logic technology and beyond
3. Application of alternating phase-shifting masks to 140-nm gate patterning: II. Mask design and manufacturing tolerances
4. Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-μm VLSI manufacturing
5. D. A. Cathey and J. B. Rolfson, “Method of phase shift lithography,” U.S. Patent No. 5,766,829 (1998).
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