Calculation of the excited states of two-dimensional MoSi2N4 layered material semi doped with Cr and W respectively-Reference-Cited by-同舟云学术

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Calculation of the excited states of two-dimensional MoSi2N4 layered material semi doped with Cr and W respectively

Published:2023-08-11 Issue:03 Volume:17 Page:
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:
Short-container-title:J. Nanophoton.

Author:

Liang Chuangjian¹,Tang Xudong²,Ding Wangyang¹,Liu Xinli³,Chen Nan¹,Lu Xiang¹

Affiliation:

1. Guangxi University, Carbon Peak and Neutrality Science and Technology Development Institute, Guangxi Colleges and Universities Key Laboratory of Blue Energy and Systems Integration, School of Physical Science and Technology, Center on Nanoenergy Rese

2. Guangxi University of Science and Technology, Liuzhou, China

3. Nanning College for Vocational Technology, Nanning, China

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Silicon solar cells: toward the efficiency limits

2. A review of thin film solar cell technologies and challenges

3. Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

4. Engineering Optical Absorption in Graphene and Other 2D Materials: Advances and Applications

5. Universal absorption of two-dimensional materials within k ⋅ p method

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