Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons-Reference-Cited by-同舟云学术

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Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons

Published:2016-09-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIV
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Author:

Pandey Sushil Kumar¹,Tyagi Lavi¹,Ghadi Hemant¹,Rawool Harshal¹,Chakrabarti Subhananda¹

Affiliation:

1. Indian Institute of Technology Bombay (India)

Publisher

SPIE

Reference19 articles.

1. Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs

2. High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping

3. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

4. Quantum-dot infrared photodetectors: Status and outlook

5. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

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