Author:
Sundaram Ganesh,Sullivan Neal T.,Mai Tung,Ke Chih-Ming
Cited by
25 articles.
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1. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low-landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27
2. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27
3. High-repeatability and low-shrinkage solution using CD-SEM for EUV resist;Metrology, Inspection, and Process Control XXXVII;2023-04-27
4. Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope;Journal of Vacuum Science & Technology B;2022-01
5. CD metrology for EUV resist using high-voltage CD-SEM: shrinkage, image sharpness, repeatability, and line edge roughness;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-18