Chemically-amplified EUV resists approaching 11 nm half-pitch-Reference-Cited by-同舟云学术

Chemically-amplified EUV resists approaching 11 nm half-pitch

Published:2018-03-27 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
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Author:

Mochi Iacopo,Garrido Olvera Karen,Meeuwissen Marieke,Yildirim Oktay,Custers Rolf,Hoefnagels Rik,Rispens Gijsbert,Vockenhuber Michaela,Ekinci Yasin,Tasdemir Zuhal

Publisher

SPIE

Reference13 articles.

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3. Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths

4. Evaluation of resist performance with EUV interference lithography for sub-22 nm patterning;Ekinci,2012

5. SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography;Ekinci,2016

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