Very high aspect ratio through silicon via reflectometry
Author:
Affiliation:
1. Technische Hochschule Wildau (Germany)
2. IHP GmbH (Germany)
3. SENTECH Instruments GmbH (Germany)
Publisher
SPIE
Reference11 articles.
1. NASA 2009 Body of Knowledge (BoK): Through-Silicon via Technology;Gerke,2009
2. Modeling and optimization of BiCMOS embedded through-silicon vias for RF-grounding;Wietstruck,2014
3. Modular integration of annular TSV structures filled with tungsten in a 0.25μm SiGe:C BiCMOS technology
4. High-aspect ratio through silicon via (TSV) technology
5. Technologies for the integration of Through Silicon Vias in MEMS packages;Warnat,2009
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