At wavelength observation of phase defect embedded in EUV mask using microscope technique-Reference-Cited by-同舟云学术

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At wavelength observation of phase defect embedded in EUV mask using microscope technique

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Terasawa Tsuneo¹,Amano Tsuyoshi¹,Yamane Takeshi¹,Watanabe Hidehiro¹,Toyoda Mitsunori²,Harada Tetsuo³,Watanabe Takeo³,Kinoshita Hiroo³

Affiliation:

1. EUVL Infrastructure Development Ctr., Inc. (Japan)

2. Tohoku Univ. (Japan)

3. Univ. of Hyogo (Japan)

Publisher

SPIE

Reference16 articles.

1. Actinic mask metrology for extreme ultraviolet lithography

2. Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete;Terasawa,2009

3. Improvement of EUVL mask blank inspection capability at Intel;Ma,2009

4. Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models;Shao,2010

5. Analysis of EUV Mask Multilayer Defect Printing Characteristics;Erdmann,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer defect detection by a polarization-insensitive external differential interference contrast module;Applied Optics;2018-04-27

2. EUV actinic brightfield mask microscopy for predicting printed defect images;SPIE Proceedings;2015-11-03

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