Optical characterization of multi-NST nanowire test structures using Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry for sub 5nm nodes-Reference-Cited by-同舟云学术

Optical characterization of multi-NST nanowire test structures using Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry for sub 5nm nodes

Published:2019-03-26 Issue: Volume: Page:
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Container-title:Metrology, Inspection, and Process Control for Microlithography XXXIII
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Author:

Korde Madhulika S.,Kal Subhadeep,Pereira Cheryl,Keller Nick,Mosden Aelan,Diebold Alain C.

Publisher

SPIE

Reference15 articles.

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2. Exploring Sub-20nm FinFET Design with Predictive Technology Models;Sinha,2012

3. Device and Circuit Performance Estimation of Junctionless Bulk FinFETs;Han,2013

4. High-Performance Fully Depleted Silicon Nanowire (Diameter ≤ 5 nm);Singh;Gate-All-Around CMOS Devices.,2006

5. Multiple-gate SOI MOSFETs: device design guidelines

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