512- and 1024-element linear InGaAs detector arrays for near-infrared (1-3μm) environmental sensing-Reference-Cited by-同舟云学术

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512- and 1024-element linear InGaAs detector arrays for near-infrared (1-3μm) environmental sensing

Published:1992-12-10 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Infrared Detectors: State of the Art
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Author:

Joshi Abhay M.,Ban Vladimir S.,Mason S. M.,Kazakia M.,Kosonocky Walter F.

Publisher

SPIE

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction in IR Detectors;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

2. Dislocation Evolvement in Metamorphic In_0.83Ga_0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing;IEEE Journal of Quantum Electronics;2022-06

3. Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer;Infrared Physics & Technology;2020-09

4. Development of A Hermetically Packaged 13µm Pixel Pitch 6000-Element InGaAs Linear Array;Image Sensing Technologies: Materials, Devices, Systems, and Applications V;2018-05-14

5. Emerging technologies for high performance infrared detectors;Nanophotonics;2018-01-01

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