Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment-Reference-Cited by-同舟云学术

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Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

Published:1999-08-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Physics and Simulation of Optoelectronic Devices VII
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Author:

Hybertsen Mark S.,Alam Muhammad A.,Shtengel Gleb E.,Belenky Gregory L.,Reynolds, Jr. C. L.,Donetsky Dmitri V.,Smith R. Kent,Baraff Gene A.,Kazarinov Rudolf F.,Wynn James D.,Smith L. E.

Publisher

SPIE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technology CAD-based design of vertical-cavity surface-emitting lasers;SPIE Proceedings;2003-07-23

2. A comprehensive VCSEL device simulator;IEEE Journal of Selected Topics in Quantum Electronics;2003-05

3. A theoretical investigation of the characteristic temperature T/sub 0/ for semiconductor lasers;IEEE Journal of Selected Topics in Quantum Electronics;2003-05

4. Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance;IEEE Journal of Quantum Electronics;2003-01

5. Simulation of temperature-dependent modulation response in multi-quantum-well lasers;SPIE Proceedings;2002-06-12

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