Effect of Ge-composition on the frequency response of a <inline-formula><math altimg="none" display="inline" overflow="scroll"><mrow><mi>Si</mi><mo>∕</mo><msub><mi>Si</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub><msub><mi>Ge</mi><mi>y</mi></msub></mrow></math></inline-formula><inline-formula><math altimg="none" display="inline" overflow="scroll"><mrow><mi mathvariant="normal">P</mi><mtext>‐</mtext><mi mathvariant="normal">i</mi><mtext>‐</mtext><mi mathvariant="normal">N</mi></mrow></math></inline-formula> photodetector-Reference-Cited by-同舟云学术

Effect of Ge-composition on the frequency response of a $Si ∕ {Si}_{1 - y} {Ge}_{y}$ $P ‐ i ‐ N$ photodetector

Published:2006-12-01 Issue:12 Volume:45 Page:124001
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Das Nikhil R.

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference22 articles.

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4. Optimization of GaAs amplification photodetectors for 700% quantum efficiency

5. N. R. Das, Y. M. Batawy, and M. J. Deen , inIntegrated Optoelectronics, M. J. Deen , D. Misra , and M. Ruzylo , Eds., p. 163–193, Electro-Chemical Society , N.J. (2002).

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