Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing-Reference-Cited by-同舟云学术

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Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing

Published:2015-05-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Das Sona,Das Utpal,Gautam Nutan,Krishna Sanjay

Publisher

SPIE

Reference12 articles.

1. Mid-IR Type-II InAs/GaSb Nanoscale Superlattice Sensors;Plis,2007

2. Surface Passivation and Performance Characteristics of Type-II InAs/GaSb Superlattice Infrared Photodetectors for Focal Plane Arrays;Hood,2007

3. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

4. PassivationofInAs/(GaIn)Sb short-period superlattice photodiodes with 10mm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y;Rehm,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays;Selected Topics in Photonics;2017-10-31

2. InAs/GaSb Type-II superlattice photodiode array inter-pixel region blue-shift by femtosecond (fs) laser anneal;Semiconductor Science and Technology;2017-08-14

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