Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers-Reference-Cited by-同舟云学术

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Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers

Published:2021-03-05 Issue: Volume: Page:
ISSN:
Container-title:High-Power Diode Laser Technology XIX
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Author:

Boni Anisuzzaman,Arslan Seval,Erbert Götz,Della Casa Pietro,Martin Dominik,Crump Paul

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars;Applied Physics Letters;2024-06-10

2. High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking;Physica Scripta;2024-04-10

3. A New Structural Design that Optimizes the Polarization and Mode Characteristics of Vertical Cavity Surface Emission Lasers;2023 International Conference on Advances in Electrical Engineering and Computer Applications (AEECA);2023-08-18

4. Mode analysis and measurement of single-emitter blue diode lasers;Applied Optics;2023-08-08

5. Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies;IEEE Photonics Journal;2022-06

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