30nm half-pitch metal patterning using Moti CD shrink technique and double patterning-Reference-Cited by-同舟云学术

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30nm half-pitch metal patterning using Moti CD shrink technique and double patterning

Published:2008-03-14 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Optical Microlithography XXI
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Author:

Versluijs Janko,De Marneffe J.-F.,Goossens Danny,Op de Beeck Maaike,Vandeweyer Tom,Wiaux Vincent,Struyf Herbert,Maenhoudt Mireille,Brouri Mohand,Vertommen Johan,Kim Ji Soo,Zhu Helen,Sadjadi Reza

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-Resolution Assist Feature Cleanup Based on Grayscale Map;IEEE Transactions on Semiconductor Manufacturing;2019-11

2. Controlling Asymmetric Photoresist Feature Dimensions during Plasma-Assisted Shrink;Plasma Processes and Polymers;2014-05-20

3. Simulation of electron scattering in a scanning electron microscope for subsurface metrology;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11

4. Immersion lithography and double patterning in advanced microelectronics;SPIE Proceedings;2009-10-23

5. A methodology for double patterning compliant split and design;SPIE Proceedings;2008-11-20

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