Improvement in performance characteristics of Zn(1-x)MgxO (x=15%) thin film transistor (TFT) with UV-ozone treatment-Reference-Cited by-同舟云学术

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Improvement in performance characteristics of Zn(1-x)MgxO (x=15%) thin film transistor (TFT) with UV-ozone treatment

Published:2019-03-01 Issue: Volume: Page:
ISSN:
Container-title:Oxide-based Materials and Devices X
language:
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Author:

Chakrabarti Subhananda,Alam Md Jawaid,Murkute Punam,Sushama Sushama,Ghadi Hemant

Publisher

SPIE

Reference22 articles.

1. High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

2. 68.3:Invited Paper: Transparent Amorphous Oxide Semiconductors for High Performance TFT

3. Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

4. Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

5. High-performance ZnO∕ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of UV-Ozone annealing on the transient characteristics of ZnMgO thin film UV-Vis photodetector;Low-Dimensional Materials and Devices 2020;2020-08-21

2. Grain boundary modeling and simulation of ZnO thin film transistor and its correlation with UV ozone annealing;Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI;2019-09-03

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