High-efficiency commercial grade 1cm2AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system-Reference-Cited by-同舟云学术

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High-efficiency commercial grade 1cm2AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system

Published:2010-06-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Wheeldon J. F.,Valdivia C. E.,Masson D.,Proulx F.,Riel B.,Puetz N.,Desfonds E.,Fafard S.,Rioux B.,SpringThorpe A. J.,Arès R.,Aimez V.,Armstrong M.,Swinton M.,Cook J.,Shepherd F.,Hall T. J.,Hinzer K.

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the voltage of GaAs solar cells with In0.4Ga0.6As nanostructures;Applied Physics Express;2020-06-04

2. Estimation of the potential for increasing the efficiency of GaInP/GaAs/Ge multi-junction solar cells by using quantum-size objects;Applied Physics Express;2020-05-13

3. Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm);Technical Physics Letters;2020-03

4. Electronic states in GaAs photoconverters with InGaAs quantum well-dots;Applied Physics Express;2020-01-01

5. Dethermalization of carriers in GaAs solar cells with quantum objects;Applied Physics Express;2019-02-26

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