Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal‐semiconductor‐metal detectors
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Published:1996-12-01
Issue:12
Volume:35
Page:3400
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ISSN:0091-3286
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Container-title:Optical Engineering
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language:en
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Short-container-title:Opt. Eng
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics