E-beam curing effects on the etch and CD-SEM stability of 193-nm resists-Reference-Cited by-同舟云学术

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E-beam curing effects on the etch and CD-SEM stability of 193-nm resists

Published:2002-07-15 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Padmanaban Munirathna,Alemy Eric L.,Dammel Ralph R.,Kim Woo-Kyu,Kudo Takanori,Lee Sang-Ho,McKenzie Douglas S.,Orsi Aldo,Rahman Dalil,Chen Wan-Lin,Sadjadi Reza M.,Livesay William R.,Ross Matthew F.

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11

2. Electron, ion and vacuum ultraviolet photon effects in 193 nm photoresist surface roughening;Journal of Physics D: Applied Physics;2010-06-22

3. Ion implantation as insoluble treatment for resist-stacking process;Journal of Micro/Nanolithography, MEMS, and MOEMS;2010-01-01

4. Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications;Advances in Resist Materials and Processing Technology XXVI;2009-03-13

5. Cure-induced photoresist distortions in double patterning;Journal of Micro/Nanolithography, MEMS, and MOEMS;2009-01-01

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