Advances in the characterization of InAs/GaSb superlattice infrared photodetectors-Reference-Cited by-同舟云学术

Advances in the characterization of InAs/GaSb superlattice infrared photodetectors

Published:2016-10-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Wörl A.¹,Daumer V.¹,Hugger T.¹,Kohn N.¹,Luppold W.¹,Müller R.¹,Niemasz J.¹,Rehm R.¹,Rutz F.¹,Schmidt J.¹,Schmitz J.¹,Stadelmann T.¹,Wauro M.¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (Germany)

Publisher

SPIE

Reference10 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Third-generation infrared photodetector arrays

3. Defects and noise in Type-II superlattice infrared detectors,;Walther,2013

4. Development of bi-spectral InAs/GaSb type II superlattice image detectors,;Stadelmann,2014

5. Schmidt, J., Daumer, V., Rehm, R., Rutz, F., “Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors,” Infrared Phys. Technol. (submitted for publication).

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