Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy

Published:2007-04-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Wijewarnasuriya Priyalal S.,Brill Gregory,Chen Yuanping,Dhar Nibir K.,Grein Chris,Velicu Silviu,Emelie P. Y.,Jung HyeSon,Sivanathan Sivalingam,D'Souza Arvind,Stapelbroek Maryn G.,Reekstin John

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dense Array Effects in SWIR HgCdTe Photodetecting Arrays;Journal of Electronic Materials;2015-05-27

2. Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays;IEEE Transactions on Electron Devices;2015-04

3. Mid and long wavelength infrared HgCdTe photodetectors exposed to proton radiation;SPIE Proceedings;2014-09-17

4. Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors;Infrared Physics & Technology;2013-11

5. Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes;Journal of Electronic Materials;2010-03-26

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