Printability and actinic AIMS review of programmed mask blank defects

Author:

Verduijn Erik1,Mangat Pawitter1,Wood Obert1,Rankin Jed1,Chen Yulu1,Goodwin Francis1,Capelli Renzo2,Perlitz Sascha2,Hellweg Dirk2,Bonam Ravi3,Matham Shravan3,Felix Nelson3,Corliss Daniel3

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

2. Carl Zeiss SMT GmbH (Germany)

3. IBM Corp. (United States)

Publisher

SPIE

Reference15 articles.

1. Printability of buried mask defects in extreme UV lithography;Hsu,2011

2. Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application;Huh,2011

3. EUV mask multilayer defects and their printability under different multilayer deposition conditions

4. Defect printability studies at SEMATECH;Jang,2011

5. Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing;Walsh,2012

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rapid profile reconstruction of phase defects via machine-learning regression model;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

2. Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-12-03

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