Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

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Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes

Published:2023-01-31 Issue:01 Volume:62 Page:
ISSN:0091-3286
Container-title:Optical Engineering
language:
Short-container-title:Opt. Eng.

Author:

Usman Muhammad¹,Jamil Tariq¹,Aamir Muhammad²,Alyemeni Abdullrahman Abdullah³

Affiliation:

1. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Faculty of Engineering Sciences, Khyber Pakhtunkhwa, Pakistan

2. King Faisal University, Department of Basic Sciences, Preparatory Year Deanship, Al Ahsa, Saudi Arabia

3. King Faisal University, College of Engineering, Department of Electrical Engineering, Al Ahsa, Saudi Arabia

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference32 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

4. AlGaN‐based ultraviolet light‐emitting diodes: challenges and opportunities

5. Solid-State Light Sources Getting Smart

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analytic Model for the 2-DEG Density Current-Voltage Characteristic for AlGaN/GaN HEMTs;International Journal of Engineering Research in Africa;2024-07-25

2. Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes;Journal of Semiconductors;2024-05-01

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