Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation-Reference-Cited by-同舟云学术

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Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Published:2011-09-08 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lin T.-Y.¹,Li L.²,Chen C.³,Chung Y.-L.¹,Yao S. D.⁴,Lee Y.-C.⁵,Qiu Z. R.³,Ferguson I. T.⁶,Wuu D.-S.⁷,Feng Z. C.¹

Affiliation:

1. National Taiwan Univ. (Taiwan)

2. Peking Univ. (Taiwan)

3. Sun Yat-Sen Univ. (China)

4. Peking Univ. (China)

5. Tungnan Univ. (Taiwan)

6. The Univ. of North Carolina at Charlotte (USA)

7. National Chung Hsing Univ. (Taiwan) and Daye Univ. (Taiwan)

Publisher

SPIE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC;Journal of Alloys and Compounds;2021-03

2. Mechanical and electronic properties under high pressure on ternary AlGaN and InGaN compounds—a first-principles perspective;Materials Research Express;2018-10-30

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