The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors-Reference-Cited by-同舟云学术

The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors

Published:2019-05-14 Issue: Volume: Page:
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Container-title:Infrared Technology and Applications XLV
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Author:

Ting David Z.,Soibel Alexander,Khoshakhlagh Arezou,Keo Sam A.,Rafol Sir B.,Fisher Anita M.,Hill Cory J.,Luong Edward M.,Pepper Brian J.,Gunapala Sarath D.

Publisher

SPIE

Reference51 articles.

1. Mid-wavelength high operating temperature barrier infrared detector and focal plane array

2. InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb

3. nBn detector, an infrared detector with reduced dark current and higher operating temperature

4. nBn structure based on InAs∕GaSb type-II strained layer superlattices

5. Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

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