Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process-Reference-Cited by-同舟云学术

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Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process

Published:2013-12-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Qian Jun,Li Jirong,Liao Yang,Shi Weimin,Kuang Huahui,Ming Xiuchun,Liu Jin,Jin Jing,Qin Juan

Publisher

SPIE

Reference8 articles.

1. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization

2. Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization

3. Aluminum-induced crystallization of amorphous silicon;Gall,2002

4. Rapid crystallization of amorphous silicon utilizing a very-high-frequency microplasma jet for Si thin-film solar cells

5. Metal Induced Crystallization of Amorphous Silicon by Using NiCl2 Vapor

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