Imaging of 32-nm <inline-formula><math display="inline" altimg="none" overflow="scroll"><mrow><mn>1</mn><mo>:</mo><mn>1</mn></mrow></math></inline-formula> lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a <inline-formula><math display="inline" altimg="none" overflow="scroll"><mrow><msub><mi mathvariant="normal">k</mi><mn>1</mn></msub></mrow></math></inline-formula> of 0.25-Reference-Cited by-同舟云学术

Imaging of 32-nm $1 : 1$ lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a $k_{1}$ of 0.25

Published:2005-07-01 Issue:3 Volume:4 Page:031103
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Sewell Harry

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The International Technology Roadmap for Semiconductors (ITRS) is available at http://www.itrs.net/Common/2004Update/2004Update.htm.

2. How to describe polarization influence on imaging

3. Challenges with hyper-NA (NA>1.0) polarized light lithography for sub lambda/4 resolution

4. Determination of mask-induced polarization effects occurring in hyper NA immersion lithography

5. Mask polarization effects in hyper NA systems

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