Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors-Reference-Cited by-同舟云学术

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Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors

Published:2018-01-26 Issue: Volume: Page:
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Container-title:Quantum Sensing and Nano Electronics and Photonics XV
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Author:

Chevallier Romain,Haddadi Abbas,Razeghi Manijeh

Publisher

SPIE

Reference26 articles.

1. A new semiconductor superlattice

2. Two-dimensional electronic structure in InAs-GaSb superlattices

3. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

4. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

5. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer

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1. Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers;Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021);2022-02-15

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