Pattern shift response metrology-Reference-Cited by-同舟云学术

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Pattern shift response metrology

Published:2018-10-08 Issue: Volume: Page:
ISSN:
Container-title:Photomask Technology 2018
language:
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Author:

Ausschnitt Kit,Truffert Vincent,D'Have Koen,Leray Philippe

Publisher

SPIE

Reference16 articles.

1. New alignment mark design structures for higher diffraction order wafer quality enhancement;Zang,2017

2. Accuracy in optical overlay metrology;Bringoltz,2016

3. Bhattacharyya, K.; et. al., “A study of swing-curve physics in diffraction-based overlay,” Proc. SPIE

4. Optical metrology in the conflict between desire and reality;Osten,2016

5. Advanced applications of scatterometry based optical metrology;Dixit,2017

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1. Track integrated backside cleaning towards high-NA EUV: correlation of backside contamination with frontside patterning performance;International Conference on Extreme Ultraviolet Lithography 2023;2023-12-01

2. Machine Learning on Multiplexed Optical Metrology Pattern Shift Response Targets to Predict Electrical Properties;IEEE Transactions on Semiconductor Manufacturing;2023

3. Image contrast metrology for EUV lithography;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

4. Metrology of thin resist for high NA EUVL;Metrology, Inspection, and Process Control XXXVI;2022-05-26

5. Measurement sensitivity of DUV scatterfield microscopy parameterized with partial coherence for duty ratio-varied periodic nanofeatures;Optics and Lasers in Engineering;2022-05

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