Stress-induced pellicle analysis for extreme-ultraviolet lithography-Reference-Cited by-同舟云学术

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Stress-induced pellicle analysis for extreme-ultraviolet lithography

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Park Eun-Sang¹,Kim Min-Ha¹,Hwang Sollee¹,Kim Jung Hwan¹,Oh Hye-Keun¹

Affiliation:

1. Hanyang Univ. (Korea, Republic of)

Publisher

SPIE

Reference10 articles.

1. Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection;Kamo,2011

2. EUV pellicle Development for Mask Defect Control;Shroff,2006

3. Mechanical deflection of a free-standing pellicle for extreme ultraviolet lithography;Park,2015

4. Development of EUV pellicle with single crystal silicon membrane;Akiyama,2010

5. Extreme ultraviolet lithography: Challenges and progress;Benschop,2001

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced lifetime of EUV pellicles due to defects;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-02

2. Thermomechanical stability evaluation of various pellicle structures with contaminant particles;Japanese Journal of Applied Physics;2021-03-08

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