Novel EUV resist development for sub-14nm half pitch-Reference-Cited by-同舟云学术

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Novel EUV resist development for sub-14nm half pitch

Published:2015-04-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Hori Masafumi,Naruoka Takehiko,Nakagawa Hisashi,Fujisawa Tomohisa,Kimoto Takakazu,Shiratani Motohiro,Nagai Tomoki,Ayothi Ramakrishnan,Hishiro Yoshi,Hoshiko Kenji,Kimura Toru

Publisher

SPIE

Reference12 articles.

1. ITRS website, http://www.itrs.net/

2. High Sensitivity Chemically Amplified EUV Resists through Enhanced EUV Absorption;Ongayi,2012

3. Synthesis of Stable Acid Amplifiers that Produce Strong, Highly Fluorinated Polymer Bound Acid;Hosoi,2012

4. A new inorganic EUV resist with high-etch resistance;Trikeriotis,2012

5. Development of EUV resist for 22nm half pitch and beyond;Maruyama,2010

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2. 极紫外光刻的随机性问题及其研究进展;Chinese Journal of Lasers;2024

3. Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist;Nano Convergence;2022-12-02

4. Review of recent advances in inorganic photoresists;RSC Advances;2020

5. Radical sensitive Zinc-based nanoparticle EUV photoresists;Advances in Patterning Materials and Processes XXXVI;2019-03-25

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