High speed 850nm oxide VCSEL development for 100Gb/s ethernet at Broadcom-Reference-Cited by-同舟云学术

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High speed 850nm oxide VCSEL development for 100Gb/s ethernet at Broadcom

Published:2022-03-03 Issue: Volume: Page:
ISSN:
Container-title:Vertical-Cavity Surface-Emitting Lasers XXVI
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Author:

Wang Jingyi,Murty Ramana,Feng Zheng-Wen,Taslim Sumtro-Joyo,Sridhara Aadi,Cai Xinle,Leong Nelvin,Koh Gim-Hong,Hioki Andie,Cheng An-Nien,Dolfi David W.,Chu Jason,Giovane Laura M.

Publisher

SPIE

Reference10 articles.

1. 100Gb/s PAM4 Oxide VCSEL Development Progress at Broadcom;Wang,2020

2. Development and Characterization of 100 Gb/s Data Communication VCSELs

3. Development of Next Generation Data Communication VCSELs

4. 50Gb/s PAM-4 Oxide VCSEL Development Progress at Broadcom;Wang,2017

5. VCSEL modulation speed: status and prospects;Larsson,2019

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 70 Gbps PAM-4 850-nm oxide-confined VCSEL without equalization and pre-emphasis;Journal of Semiconductors;2024-05-01

2. Development and characterization of 100Gb/s 940nm VCSELs for multimode optical links;Vertical-Cavity Surface-Emitting Lasers XXVIII;2024-03-13

3. Single-Channel 106.25 Gb/s PAM-4 and 64 Gb/s NRZ Transmission With a 33.4-GHz 850-nm VCSEL With low-RIN Characteristics;Journal of Lightwave Technology;2024-01-01

4. Concept of BiDi Optimized OM4 Multimode Fiber for High Date Rate Short Reach VCSEL Transmission;2023 Opto-Electronics and Communications Conference (OECC);2023-07-02

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