Epitaxial Semiconductor Optical Interference Devices-Reference-Cited by-同舟云学术

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Epitaxial Semiconductor Optical Interference Devices

Published:1987-08-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Gourley P. L.¹,Biefeld R. M.¹,Drummond T. J.¹,Zipperian T. E.¹

Affiliation:

1. Sandia National Laboratories (United States)

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-reflectance AlPSb/GaPSb distributed Bragg reflector mirrors on InP grown by gas-source molecular beam epitaxy;Electronics Letters;1994-02-17

2. High‐efficiency TEM00continuous‐wave (Al,Ga)As epitaxial surface‐emitting lasers and effect of half‐wave periodic gain;Applied Physics Letters;1989-03-27

3. Molecular-beam epitaxy grown Fabry–Perot multiple quantum well reflection modulator;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-03

4. High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 [micro sign]m wavelengths;Electronics Letters;1989

5. Electrically tunable Fabry–Perot mirror using multiple quantum well index modulation;Applied Physics Letters;1988-08-22

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