Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning-Reference-Cited by-同舟云学术

Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Published:2013-09-04 Issue:4 Volume:12 Page:041302
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Xu Kaidong,Souriau Laurent,Hellin David,Versluijs Janko,Wong Patrick,Vangoidsenhoven Diziana,Vandenbroeck Nadia,Dekkers Harold,Shi Xiaoping,Albert Johan,Tan Chi Lim,Vertommen Johan,Coenegrachts Bart,Orain Isabelle,Kimura Yoshie,Wiaux Vincent,Boullart Werner

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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