Electronic, optical properties, and effective masses of AlxGa1−xAs and InyGa1−yAs based on the first principle
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SPIE
Reference13 articles.
1. Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
2. First principles study on the structural stability and optoelectronic properties of InxGa1−xAs materials with different Indium component
3. Band parameters for III–V compound semiconductors and their alloys
4. Sulfur passivation and contact methods for GaAs nanowire solar cells
5. Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells
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