Understanding EUV resist mottling leading to better resolution and linewidth roughness-Reference-Cited by-同舟云学术

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Understanding EUV resist mottling leading to better resolution and linewidth roughness

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Thackeray James¹,Cameron James¹,Jain Vipul¹,LaBeaume Paul¹,Coley Suzanne¹,Ongayi Owendi¹,Wagner Mike¹,Biafore John²,Chun Jun Sung³

Affiliation:

1. Dow Electronic Materials (United States)

2. KLA-Tencor (United States)

3. SEMATECH Inc. (United States)

Publisher

SPIE

Reference11 articles.

1. Radiation Chemistry in Chemically Amplified Resists;Kozawa,2010

2. Materials Challenges for sub-20-nm Lithography;Thackeray,2011

3. Impact of polymerization process on OOB on lithographic performance of a EUV resist;Jain,2011

4. Lithographic importance of acid diffusion in chemically amplified resists;van Steenwinckel,2005

5. The lithographic impact of resist model parameters;Smith,2004

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trends in photoresist materials for extreme ultraviolet lithography: A review;Materials Today;2023-07

2. Analysis of stochastic effects in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist;Japanese Journal of Applied Physics;2016-06-06

3. Effect of thermalization distance on stochastic phenomena in 7-nm-half-pitch line-and-space pattern fabrication using chemically amplified extreme ultraviolet resists;Japanese Journal of Applied Physics;2016-01-20

4. Chemically amplified resists and acid amplifiers;Materials and Processes for Next Generation Lithography;2016

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