Low dark current, back-illuminated charge coupled devices-Reference-Cited by-同舟云学术

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Low dark current, back-illuminated charge coupled devices

Published:2009-02-05 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Westhoff R. C.,Burke B. E.,Clark H. R.,Loomis A. H.,Young D. J.,Gregory J. A.,Reich R. K.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Backside passivation for improving the noise performance in CMOS image sensor;AIP Advances;2020-04-01

2. High-performance silicon imagers, back illumination using delta and superlattice doping, and their applications in astrophysics, medicine, and other fields;High Performance Silicon Imaging;2020

3. Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors;Applied Physics A;2018-02-20

4. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays;Journal of Astronomical Telescopes, Instruments, and Systems;2015-09-11

5. Development and application of spherically curved charge-coupled device imagers;Applied Optics;2015-03-31

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