Theoretical modeling of PEB procedure on EUV resist using FDM formulation-Reference-Cited by-同舟云学术

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Theoretical modeling of PEB procedure on EUV resist using FDM formulation

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
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Author:

Kim Muyoung,Moon Junghwan,Choi Joonmyung,Lee Byunghoon,Jeong Changyoung,Kim Heebom,Cho Maenghyo

Publisher

SPIE

Reference11 articles.

1. Radiation Chemistry in Chemically Amplified Resists

2. Sub-10 nm patterning using EUV interference lithography

3. Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method

4. Beyond EUV lithography: a comparative study of efficient photoresists’ performance;Mojarad,2015

5. Physical Modeling of Deprotection Induced Thickness Loss;Jakatdar,1999

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of acid diffusion and resist molecular size on line edge roughness for chemically amplified resists in EUV lithography: computational study;Japanese Journal of Applied Physics;2021-10-01

2. Stochastic Simulation of Development Process in Electron Beam Lithography;Journal of Photopolymer Science and Technology;2021

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