Review of resist-based flare measurement methods for extreme ultraviolet lithography-Reference-Cited by-同舟云学术

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Review of resist-based flare measurement methods for extreme ultraviolet lithography

Published:2013-12-17 Issue:4 Volume:12 Page:042001
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Sun Lei,Wood Obert R.,Verduijn Erik A.,Singh Mandeep,Wang Wenhui,Kim Ryoung-Han,Mangat Pawitter,Koh Hui Peng,Levinson Harry J.

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mask absorber, mask tone, and wafer process impact on resist line-edge-roughness;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-13

2. Impact of mask topography and flare on process window of EUV lithography;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

3. Manufacturing technologies toward extreme precision;International Journal of Extreme Manufacturing;2019-06-03

4. Theoretical and experimental investigation of continuous-wave laser scribing on metal thin film: effect of power;Applied Optics;2018-11-28

5. Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

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