Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes-Reference-Cited by-同舟云学术

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Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Published:2008-04-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Braun Harald,Scholz Dominik,Meyer Tobias,Schwarz Ulrich T.,Queren Désirée,Schillgalies Marc,Brüninghoff Stefanie,Laubsch Ansgar,Strauß Uwe

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2025-03

2. Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes;physica status solidi (a);2023-01-05

3. Coupled fast lateral-longitudinal mode dynamics in blue broad-area laser diodes;2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10

4. Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes;Applied Physics Letters;2014-10-27

5. High power broad ridge (Al,In)GaN laser diodes: Spatial and spectral stability;physica status solidi (a);2009-06

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