Characterization of a fully depleted CCD on high-resistivity silicon-Reference-Cited by-同舟云学术

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Characterization of a fully depleted CCD on high-resistivity silicon

Published:1997-04-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Solid State Sensor Arrays: Development and Applications
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Author:

Stover Richard J.,Wei Mingzhi,Lee Yan J.,Gilmore David K.,Holland Steven E.,Groom Donald E.,Moses William W.,Perlmutter Saul,Goldhaber Gerson,Pennypacker Carlton R.,Wang N. W.,Palaio Nicholas P.

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual-sided charge-coupled devices;Physical Review Applied;2024-07-02

2. Chromatic component in the modulation transfer function of fully depleted charge-coupled devices;Journal of Optical Technology;2021-03-01

3. Characteristic of e2v CMOS sensors for astronomical applications;SPIE Proceedings;2014-07-23

4. A 260 megapixel visible/NIR mixed technology focal plane for space;SPIE Proceedings;2011-09-08

5. The low-resolution imaging spectrograph red channel CCD upgrade: fully depleted, high-resistivity CCDs for Keck;SPIE Proceedings;2010-07-16

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