Novel spin on planarization technology by photo curing SOC (P-SOC)-Reference-Cited by-同舟云学术

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Novel spin on planarization technology by photo curing SOC (P-SOC)

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Endo Takafumi¹,Sakamoto Rikimaru¹,Hashimoto Keisuke¹,Saito Daigo¹,Nishimaki Hirokazu¹,Karasawa Ryo¹,Tokunaga Hikaru¹

Affiliation:

1. Nissan Chemical Industries, Ltd. (Japan)

Publisher

SPIE

Reference4 articles.

1. Performance of tri-layer process required for 22nm and beyond;Yayi,2011

2. High etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond;Fumiko,2012

3. Process variability of self-aligned multiple patterning;Kenichi,2013

4. Spin-on-Carbon-Hardmask with high wiggling resistance;Yasunobu,2012

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4. New spin on carbon materials made from hemicellulose for hardmask layer;Advances in Patterning Materials and Processes XXXV;2018-03-28

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