Polarization matched c-plane III-nitride quantum well structure
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Publisher
SPIE
Reference19 articles.
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1. 53‐1: Invited Paper: Enhanced Performance of III‐Nitride‐Based Light‐Emitting Diodes Through Novel Band Engineering and Fabrication Technology;SID Symposium Digest of Technical Papers;2023-06
2. Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy;Optics Letters;2022-11-28
3. Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LED;IEEE Photonics Journal;2022
4. Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces;Physical Review B;2020-12-21
5. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review;Journal of Physics D: Applied Physics;2019-12-09
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