InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm-Reference-Cited by-同舟云学术

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InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm

Published:2015-03-10 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Novel In-Plane Semiconductor Lasers XIV
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Author:

Sprengel Stephan,Veerabathran Ganpath K.,Andrejew Alexander,Köninger Anna,Boehm Gerhard,Grasse Christian,Amann Markus-Christian

Publisher

SPIE

Reference11 articles.

1. The HITRAN 2008 molecular spectroscopic database

2. Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm;Boehm,2007

3. Low-threshold 3 ìm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 ºC;Vizbaras,2011

4. Mid-IR type-II interband cascade lasers,” IEEE J. Sel. Topics Quantum Electron;Vurgaftman,2011

5. InP-Based Type-II Quantum-Well Lasers and LEDs,” IEEE J. Sel. Top. Quant. Electron;Sprengel,2013

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain;Engineering Vibration, Communication and Information Processing;2018-10-31

2. Next-generation mid-infrared sources;Journal of Optics;2017-11-14

3. Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers;IEEE Transactions on Electron Devices;2017-04

4. Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region;Applied Physics Letters;2016-11-28

5. Novel InP- and GaSb-based light sources for the near to far infrared;Semiconductor Science and Technology;2016-10-11

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