Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation-Reference-Cited by-同舟云学术

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Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Published:2014-03-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Fedorenko Yanina G.,Hughes Mark A.,Colaux Julien L.,Jeynes C.,Gwilliam Russell M.,Homewood Kevin P.,Yao Jin,Hewak Dan W.,Lee Tae-Hoon,Elliott Stephen R.,Gholipour B.,Curry Richard J.

Publisher

SPIE

Reference19 articles.

1. States in the Gap in Glassy Semiconductors

2. Chemical modification of chalcogenide glasses by lithium

3. N-type conductivity in chalcogenide glasses and layers

4. Mechanism for Doping in Bi Chalcogenide Glasses

5. Is the n-type conductivity in some Bi-doped chalcogenide glasses controlled by percolation?

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of electrical properties of heterojunction based on ZnIn 2 Se 4;Optical Materials;2017-04

2. Electron conductivity in GeTe and GeSe upon ion implantation of Bi;Semiconductors;2015-12

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