InN as THz emitter excited at 1060 nm and 800 nm-Reference-Cited by-同舟云学术

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InN as THz emitter excited at 1060 nm and 800 nm

Published:2006-04-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Pradarutti Boris,Matthäus Gabor,Brückner Claudia,Riehemann Stefan,Notni Gunther,Nolte Stefan,Cimalla Volker,Lebedev Vadim,Ambacher Oliver,Tünnermann Andreas

Publisher

SPIE

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The synthesis and formation mechanism of nonpolar InN nanoplates;CrystEngComm;2021

2. Growth of a-Plane InN Film and Its THz Emission;Chinese Physics Letters;2014-07

3. Influence of structural anisotropy to anisotropic electron mobility in a-plane InN;Applied Physics Letters;2013-02-11

4. Optically- and Electrically-Stimulated Terahertz Radiation Emission from Indium Nitride;Journal of Infrared, Millimeter, and Terahertz Waves;2012-05-06

5. Terahertz radiation due to random grating coupled surface plasmon polaritons;Physical Review B;2011-04-18

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