Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light-Reference-Cited by-同舟云学术

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Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light

Published:2012-02-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Nakazawa Taiki¹,Kuroda Rihito¹,Koda Yasumasa¹,Sugawa Shigetoshi¹

Affiliation:

1. Tohoku Univ. (Japan)

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of UV Light-Induced Spectral Response Degradation of CMOS-Based Photodetectors;Sensors;2024-02-27

2. An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging;Sensors;2019-12-18

3. A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method;Sensors;2019-06-19

4. A CMOS image sensor with dual pixel reset voltage for high accuracy ultraviolet light absorption spectral imaging;Japanese Journal of Applied Physics;2019-03-04

5. [Papers] A Multi Spectral Imaging System with a 71dB SNR 190-1100 nm CMOS Image Sensor and an Electrically Tunable Multi Bandpass Filter;ITE Transactions on Media Technology and Applications;2018

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