"Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors
Author:
Affiliation:
1. David Sarnoff Research Center (United States)
Publisher
SPIE
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application;Advances in OptoElectronics;2011-08-24
2. Multielement IR detectors based on Schottky barriers sensitive to radiation with quantum energy less than the height of the potential barrier;Journal of Optical Technology;2008-08-01
3. Advancements in small-pixel, video-rate, backside-illuminated charge-coupled devices;Special Publications;2007
4. Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors;Thin Solid Films;2004-11
5. Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector;Materials Chemistry and Physics;2001-02
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