State of the art in large-format IR FPA development at CMC Electronics, Cincinnati-Reference-Cited by-同舟云学术

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State of the art in large-format IR FPA development at CMC Electronics, Cincinnati

Published:2003-09-30 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Greiner Mark E.,Davis Mike,Devitt John W.,Rawe Rich,Wade David R.,Voelker Jeff

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the damage to hybrid infrared photodetectors upon multiple cycles of cooling to liquid-nitrogen temperatures using an interference technique;Journal of Optical Technology;2021-01-01

2. Real-Time Control of Nonflatness of Components of Infrared-Range Flip-Chip Photodetectors;Optoelectronics, Instrumentation and Data Processing;2019-03

3. Inductively coupled plasma-reactive ion etching of InSb using CH4∕H2∕Ar plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07

4. Evaluation of implanted InSb p+n diodes passivated with composite anodic oxide/SiOxstack;physica status solidi (a);2008-10

5. Mesa etching characterization of InSb for high density image array applications;Journal of the Chinese Institute of Engineers;2007-01

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