Effects of phenolic compound addition to fractionated Novolak-based resists to improve resolution capability(2)

Author:

Sekiguchi Atsushi1,Matsumoto Yoko1,Sensu Yoshihisa1,Takei Satoshi2,Hanabata Makoto2,Tanaka Hatsuyuki3

Affiliation:

1. Litho Tech Japan Co., Ltd. (Japan)

2. Toyama Prefectural Univ. (Japan)

3. Merck Performance Materials Manufacturing G.K. (Japan)

Publisher

SPIE

Reference13 articles.

1. Standing-wave Effect in Photoresist with and without HMDS

2. Relationship between Dissolution Property and Molecular Weight of Positive-tone Novolak Resist

3. Relationship between the Development Property and the Photo Active Compound Contents of the Positive-Tone Novolak Resist;Nakao,2010

4. Study of the lithography characteristics of novolak resist at different PAC concentrations;Sekiguchi,2012

5. Advanced Materials for Optics and Electronics

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of lithographic characteristics due to differences in novolac resin structure;Advances in Patterning Materials and Processes XXXVII;2020-03-23

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