Study of flowability effect on self-planarization performance at SOC materials-Reference-Cited by-同舟云学术

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Study of flowability effect on self-planarization performance at SOC materials

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Yun Huichan¹,Kim Jinhyung¹,Park Youjung¹,Kim Yoona¹,Jeong Seulgi¹,Baek Jaeyeol¹,Yoon Byeri¹,Lim Sanghak¹

Affiliation:

1. SAMSUNG SDI Co., Ltd. (Korea, Republic of)

Publisher

SPIE

Reference6 articles.

1. Development of Spin-on Carbon Hardmasks with Comparable Etch Resistance to Amorphous Carbon Layer(ACL);Hwan-Sung,2008

2. Development of Spin-On-Carbon Hard Mask for Advanced Node;Takanori,2014

3. Global planarization of gap-filling process for low-k dual damascene applications;Ruei,2005

4. Planarization Properties of Resist and Polyimide Coatings

5. Multilayer Planarization of Polymer Dielectrics;Punit,2001

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of Spin-on Carbon Materials with High Planarization Performance for Multilayer Resist Process;2020 IEEE International Interconnect Technology Conference (IITC);2020-10-05

2. Development of low blaze angle gratings for ALS-U;Advances in X-Ray/EUV Optics and Components XV;2020-08-21

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